S9972/s9973 series S9972/s9973 series are families of fft-ccd image sensors specifically designed for low-light-level detection in scientific appl ications. by using the binning operation, S9972/s9973 series can be used as a linear image sensor having a long aperture in the direction of the d evice length. this makes S9972/s9973 series ideally suited for use in spectrophotometry. the binning operation offers significant improvement in s /n and signal processing speed compared with conventional methods by which signals are digitally added by an external circuit. S9972/s9973 se ries also feature low noise and low dark signal (mpp mode operation). this enables low-light-level detection and long integration time, t hus achieving a wide dynamic range. S9972/s9973 series have an effective pixel size of 24 24 m and are available in image areas of 24.576 (h) 2.976 (v) mm 2 (1024 124 pixels) and 24.576 (h) 6.048 (v) mm 2 (1024 252 pixels). S9972/s9973 series are pin compatible with s9970/s9971 series. (operating conditions and characteristics are a little bit different from s9970/s9971 series.) features l 1024 (h) 124 (v) and 1024 (h) 252 (v) pixel format l pixel size: 24 24 m l line/pixel binning l 100 % fill factor l wide dynamic range l low dark signal l low readout noise l mpp operation l high ir sensitivity applications l fluorescence spectrometer, icp l raman spectrometer l industrial inspection requiring l semiconductor inspection l dna sequencer l low-light-level detection image sensor ccd area image sensor front-illuminated fft-ccd, high ir sensitivity preliminary data nov. 2005 selection guide type no. cooling number of total pixels number of active pixels active area [mm (h) mm (v)] S9972-1007 1044 128 1024 124 24.576 2.976 S9972-1008 non-cooled 1044 256 1024 252 24.576 6.048 s9973-1007 1044 128 1024 124 24.576 2.976 s9973-1008 one-stage te-cooled 1044 256 1024 252 24.576 6.048 general ratings parameter specification pixel size 24 (h) 24 (v) m vertical clock phase 2 phase horizontal clock phase 2 phase output circuit one-stage mosfet source follower package 24 pin ceramic dip (refer to dimensional outlines) window * 1 S9972 series: quartz glass s9973 series: sapphire glass *1: temporary window type and uv coat type are available upon request. (temporary window is fixed by tape to protect the ccd chip and wire bonding.) temporary window type: expressed by ?n? ex. S9972-1007n uv coat type: expressed by ?uv? ex. S9972-1007uv 1
ccd area image sensor S9972/s9973 series 2 absolute maximum ratings (ta=25 c) parameter symbol min. typ. max. unit operating temperature topr -50 - +30 c storage temperature tstg -50 - +70 c od voltage v od -0.5 - +25 v rd voltage v rd -0.5 - +18 v isv voltage v isv -0.5 - +18 v ish voltage v ish -0.5 - +18 v igv voltage v ig1v , v ig2v -15 - +15 v igh voltage v ig1h , v ig2h -15 - +15 v sg voltage v sg -15 - +15 v og voltage v og -15 - +15 v rg voltage v rg -15 - +15 v tg voltage v tg -15 - +15 v vertical clock voltage v p1v , v p2v -15 - +15 v horizontal clock voltage v p1h , v p2h -15 - +15 v operating conditions (mpp mode, ta=25 c) parameter symbol min. typ. max. unit output transistor drain voltage v od 18 20 22 v reset drain voltage v rd 12 13 14 v output gate voltage v og -0.5 0 2 v substrate voltage v ss - 0 - v test point (vertical input source) v isv -v rd -v test point (horizontal input source) v ish - v rd - v test point (vertical input gate) v ig1v , v ig2v -8 0 - v test point (horizontal input gate) v ig1h , v ig2h -8 0 - v high v p1vh , v p2vh 046 vertical shift register clock voltage low v p1vl , v p2vl -9 -8 -7 v high v p1hh , v p2hh 0 4 6 horizontal shift register clock voltage low v p1hl , v p2hl -9 -8 -7 v high v sgh 046 summing gate voltage low v sgl -9 -8 -7 v high v rgh 0 4 6 reset gate voltage low v rgl -9 -8 -7 v high v tgh 046 transfer gate voltage low v tgl -9 -8 -7 v electrical characteristics (ta=25 c) parameter symbol remark min. typ. max. unit signal output frequency fc - - 0.1 1 mhz S9972/s9973-1007 - - 1600 vertical shift register capacitance S9972/s9973-1008 c p1v , c p2v - - 3200 pf horizontal shift register capacitance c p1h , c p2h - - 180 pf summing gate capacitance c sg - - 7 - pf reset gate capacitance c rg -- 7 -pf transfer gate capacitance c tg - - 100 pf transfer efficiency cte * 2 0.99995 0.99999 - - dc output level vout * 3 12 15 18 v output impedance zo * 3 -3-k ? power dissipation p * 3, * 4 - 15 - mw *2: charge transfer efficiency per pixel, measured at half of the full well capacity. *3: the values depend on the load resistance. (v od =20 v, load resistance=10 k ? ) *4: power dissipation of the on-chip amplifier.
ccd area image sensor S9972/s9973 series spectral response (without window) 50 40 30 20 10 0 200 400 300 500 600 700 wavelength (nm) 800 900 1000 1100 1200 quantum efficiency (%) (typ. ta=25 ?c) s9970/s9971 series S9972/s9973 series spectral transmittance characteristics 0 10 100 200 wavelength (nm) transmittance (%) 300 400 500 600 700 800 900 1000 20 30 40 50 60 70 80 90 100 (typ. ta=25 ? c) quartz window sapphire window 3 electrical and optical characteristics (ta=25 c, unless otherwise noted) parameter symbol remark min. typ. max. unit saturation output voltage vsat - - fw sv - v vertical 120 240 - full well capacity horizontal fw - 240 480 - ke - ccd node sensitivity sv * 5 -2.8-v/e - +25 c - 2000 30000 dark current (mpp mode) 0 c ds * 6 - 100 1500 e - /pixel/s readout noise nr * 7 -418e - rms line binning 13333 120000 - dynamic range area scanning - * 8 6667 60000 - - spectral response range - - 400 to 1100 - nm photo response non-uniformity prnu * 9 - - 10 % point defects * 10 --0 cluster defects * 11 --0 blemish column defects - * 12 --0 - *5: v od =20 v , load resistance=10 k ? *6: dark current nearly doubles for every 5 to 7 c increase in temperature. *7: -40 c, operating frequency is 80 khz. *8: dr = fw / nr *9: measured at half of the full well capacity. prnu = noise / signal 100 [%], noise: fixed pattern noise (peak to peak) *10: white spots > 3 % of full well at 0 c after ts=1 s black spots pixels whose sensitivity is lower than one-half of the average pixel output (measured with uniform light producing one-half of the saturation charge) *11: 2 to 9 contiguous defective pixels *12: 10 or more contiguous defective pixels kmpdb0257ec kmpdb0101ea
ccd area image sensor S9972/s9973 series device structure, line output format ...... ...... ...... v 1h ig1v ig2v isv ss rg rd os od og sg d1 d2 d3 d4 d5 d6 d7 d8 d9 d10 d11 d12 d13 d14 d15 d16 d17 d18 d19 d20 1 2 3 45 6 20 23 22 24 16 15 v=124, 252 h=1024 ish ig1h ig2h p1h p2h 13 12 11 10 9 4 blank 4 blank 4 optical black 4 optical black 1024 signal out 2 isolation 2 isolation tg p1v 14 p2v integration period (shutter must be open) vertical binning period (shutter must be closed) 3..126 3..254 127 255 128 256 p1v p2v, tg p1h p2h, sg readout period (shutter must be closed) 124 + 4 (isolation): S9972/s9973-1007 252 + 4 (isolation): S9972/s9973-1008 tpwv to v r tpwh, tpws tpwr 123 1043 1044: S9972/s9973-1007/-1008 4..1042 12 d19 d2 d1 d20 rg os d3..d10, s1..s1024, d11..d18 kmpdc0238ea pixel format left horizontal direction right blank optical black isolation effective isolation optical black blank 4 4 2 1024 2 4 4 top vertical direction bottom isolation effective isolation 2 124 or 252 2 kmpdc0237ea timing chart line binning 4
ccd area image sensor S9972/s9973 series integration period (shutter must be open) p1v rg os p2v, tg p1h p2h, sg readout period (shutter must be closed) enlarged view tpwv to v r tpwr d1 d2 d3 d4 d18 d19 d20 p2v, tg p1h p2h, sg rg os tpwh, tpws 123 4..127 4..255 d5..d10, s1..s1024, d11..d17 128 124 + 4 (isolation): S9972/s9973-1007 256 252 + 4 (isolation): S9972/s9973-1008 kmpdc0240ea parameter symbol remark min. typ. max. unit S9972/s9973-1007 6.0 18 - pulse width S9972/s9973-1008 tpwv * 13 12 36 - s p1v, p2v, tg rise and fall time tprv, tpfv - 200 - - ns pulse width tpwh - 500 5000 - ns rise and fall time tprh, tpfh * 13 10 - - ns p1h, p2h duty ratio - - - 50 - % pulse width tpws * 14 500 5000 - ns rise and fall time tprs, tpfs - 10 - - ns sg duty ratio - - - 50 - % pulse width tpwr 100 500 - ns rg rise and fall time tprr, tpfr - 5 - - ns tg - p1h overlap time tovr - 3 6 - s *13: the clock pulses should be overlapped at 50 % of clock pulse amplitude. *14: p2h and sg should have the same electrical specifications. area scanning 2: large full well mode 5 integration period (shutter must be open) p1v rg os p2v, tg p1h p2h, sg readout period (shutter must be closed) enlarged view 4..127 4..255 tpwv to v r tpwr d1 d2 d3 d4 d18 d19 d20 d5..d10, s1..s1024, d11..d17 p2v, tg p1h p2h, sg rg os tpwh, tpws 123 128 124 + 4 (isolation): S9972/s9973-1007 256 252 + 4 (isolation): S9972/s9973-1008 kmpdc0239ea area scanning 1: low dark current mode
ccd area image sensor S9972/s9973 series dimensional outlines (unit: mm) active area 24.576 40.64 0.41 14.99 0.25 6.048 1.1 0.3 1st pin indication pad photosensitive surface 0.51 3.0 2.54 27.94 photosensitive surface 6 kmpda0205ea active area 24.576 40.64 0.41 10.05 0.25 2.976 1.1 0.3 1st pin indication pad photosensitive surface 0.46 3.0 2.54 27.94 photosensitive surface kmpda0204ea S9972-1008 S9972-1007 active area 24.576 40.64 0.41 14.99 0.25 2.976 3.2 0.4 7.1 12.0 4.0 5.0 0.46 2.54 27.94 7.65 0.5 58.84 1st pin indication pad photosensitive surface te-cooler kmpda0206ea s9973-1007
ccd area image sensor S9972/s9973 series 7.3 1.0 6.7 5.3 photosensitive surface (24 ) 0.5 7.7 1st pin indication pad 6.048 4.0 19.0 22.4 22.9 44.0 52.0 60.0 2.54 window 28.6 active area 24.576 8.2 te-cooler 7 kmpda0198ea s9973-1008 pin connections S9972 series s9973 series pin no. symbol description symbol description remark 1 rg reset gate rg reset gate 2 rd reset drain rd reset drain 3 os output transistor source os output transistor source 4 od output transistor drain od output transistor drain 5 og output gate og output gate 6 sg summing gate sg summing gate same timing as p2h 7 nc th1 thermistor 8 nc th2 thermistor 9 p2h ccd horizontal register clock-2 p2h ccd horizontal register clock-2 10 p1h ccd horizontal register clock-1 p1h ccd horizontal register clock-1 11 ig2h test point (horizontal input gate-2) ig2h test point (horizontal input gate-2) shorted to gnd 12 ig1h test point (horizontal input gate-1) ig1h test point (horizontal input gate-1) shorted to gnd 13 ish test point (horizontal input source) ish test point (horizontal input source) shorted to rd 14 p2v ccd vertical register clock-2 p2v ccd vertical register clock-2 15 p1v ccd vertical register clock-1 p1v ccd vertical register clock-1 16 tg * 15 transfer gate tg * 15 transfer gate same timing as p2v 17 nc nc 18 nc p- te-cooler- 19 nc p+ te-cooler+ 20 ss substrate (gnd) ss substrate (gnd) 21 nc nc 22 isv test point (vertical input source) isv test point (vertical input source) shorted to rd 23 ig2v test point (vertical input gate-2) ig2v test point (vertical input gate-2) shorted to gnd 24 ig1v test point (vertical input gate-1) ig1v test point (vertical input gate-1) shorted to gnd *15: tg is an isolation gate between vertical register and horizontal register. in standard operation, the same pulse as p2v sh ould be applied to tg.
ccd area image sensor S9972/s9973 series specifications of built-in te-cooler (typ.) parameter symbol condition s9973-1007 s9973-1008 unit internal resistance rint ta=25 c6.01.2 ? maximum current * 16 imax tc * 17 =th * 18 =25 c 1.5 3.0 a maximum voltage vmax tc * 17 =th * 18 =25 c8.8 3.6v maximum heat absorption * 19 qmax 6.7 5.1 w maximum temperature of hot side -70 c *16: maximum current imax: if the current is greater than imax, the heat absorption begins to decrease due to the joule heat. it should be noted that this value is not a damage threshold. to protect the thermoelectric cooler and maintain stable operation, the supply current should be less than 60 % of this maximum current. *17: temperature of cool side of thermoelectric cooler *18: temperature of hot side of thermoelectric cooler *19: maximum heat absorption qmax this is a heat absorption when the maximum current is supplied to the te-cooler. 8 te-cooler characteristics 0 2 4 6 10 8 -30 2.0 1.5 1.0 0.5 0 -20 -10 0 10 20 (typ. ta=25 ? c) voltage (v) ccd temperature ( ? c) current (a) voltage vs. current ccd temperature vs. current kmpdb0177eb s9973-1007 0 1 2 3 voltage (v) ccd temperature ( ? c) 4 7 6 5 -40 -30 4 3 2 current (a) 1 0 -20 -10 0 10 20 30 (typ. ta=25 ? c) voltage vs. current ccd temperature vs. current kmpdb0179eb s9973-1008
ccd area image sensor S9972/s9973 series hamamatsu photonics k.k., solid state division 1126-1 ichino-cho, higashi-ku, hamamatsu city, 435-8558 japan, telephone: (81) 53-434-3311, fax: (81) 53-434-5184, www.hamamats u.com u.s.a.: hamamatsu corporation: 360 foothill road, p.o.box 6910, bridgewater, n.j. 08807-0910, u.s.a., telephone: (1) 908-231-0 960, fax: (1) 908-231-1218 germany: hamamatsu photonics deutschland gmbh: arzbergerstr. 10, d-82211 herrsching am ammersee, germany, telephone: (49) 08152 -3750, fax: (49) 08152-2658 france: hamamatsu photonics france s.a.r.l.: 19, rue du saule trapu, parc du moulin de massy, 91882 massy cedex, france, teleph one: 33-(1) 69 53 71 00, fax: 33-(1) 69 53 71 10 united kingdom: hamamatsu photonics uk limited: 2 howard court, 10 tewin road, welwyn garden city, hertfordshire al7 1bw, unit ed kingdom, telephone: (44) 1707-294888, fax: (44) 1707-325777 north europe: hamamatsu photonics norden ab: smidesv ? gen 12, se-171 41 solna, sweden, telephone: (46) 8-509-031-00, fax: (46) 8-509-031-01 italy: hamamatsu photonics italia s.r.l.: strada della moia, 1/e, 20020 arese, (milano), italy, telephone: (39) 02-935-81-733, fax: (39) 02-935-81-741 information furnished by hamamatsu is believed to be reliable. however, no responsibility is assumed for possible inaccuracies or omissions. specifications are subject to change without notice. no patent rights are granted to any of the circuits described herein. ?200 6 hamamatsu photonics k.k. cat. no. kmpd1092e03 jun. 2006 dn 9 precaution for use (electrostatic countermeasures) handle these sensors with bare hands or wearing cotton gloves. in addition, wear anti-static clothing or use a wrist strap, in order to prevent electrostatic damage due to electrical charges from friction. avoid directly placing these sensors on a work-desk or work-bench that may carry an electrostatic charge. provide ground lines or ground connection with the work-floor, work-desk and work-bench to allow static electricity to discharge. ground the tools used to handle these sensors, such as tweezers and soldering irons. it is not always necessary to provide all the electrostatic measures stated above. implement these measures according to the amount of damage that occurs. element cooling/heating temperature incline rate when cooling the ccd by an externally attached cooler, set the cooler operation so that the temperature gradient (rate of temperature change) for cooling or allowing the ccd to warm back is less than 5 k/minute. specifications of built-in temperature sensor a chip thermistor is built in the same package with a ccd chip, and the ccd chip temperature can be monitored with it. a relati on between the thermistor resistance and absolute temperature is expressed by the following equation. r1 = r2 expb (1 / t1 - 1 / t2) where r1 is the resistance at absolute temperature t1 (k) r2 is the resistance at absolute temperature t2 (k) b is so-called the b constant (k) the characteristics of the thermistor used are as follows. r (298k) = 10 k ? b (298k / 323k) = 3450 k kmpdb0111ea (typ. ta=25 ? c) 10 k ? 220 240 260 temperature (k) resistance 280 300 100 k ? 1 m ?
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